This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXYN30N170CV1 +BOM

Efficient XPT IGBT suitable for high voltage applications with 30A current handling capabilities

Manufacturer:

Ixys
Mfr.Part #:

IXYN30N170CV1
Datasheet:

IXYN30N170CV1 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
Collector-Emitter Saturation Voltage:

3.5 V
EDA/CAD Models:

Request Free CAD Models for IXYN30N170CV1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXYN30N170CV1 General Description

The IXYN30N170CV1 is the IGBT module of choice for high-power applications such as motor control, power converters, and renewable energy systems. With an impressive 1700V voltage rating and 30A current rating, this module delivers efficient switching performance and low on-state power dissipation, ensuring reliable operation in demanding environments. The compact and rugged design, complete with integrated thermal protection, makes installation a breeze and guarantees long-term reliability. Additionally, the IXYN30N170CV1 features low conduction and switching losses, resulting in improved energy efficiency and reduced heat generation during operation. This module is easy to install and can be used in various industrial and commercial applications that require high-power switching capabilities. Plus, it's RoHS-compliant and meets industry standards for quality and performance, giving you peace of mind that it will deliver exceptional performance every time

Key Features

Compact size and lightweight design
High reliability and durability
Low thermal noise
Fully shielded against electromagnetic interference
Operating frequency: up to 1 GHz
RoHS compliant

Application

EV charging stations
Grid-tied inverters
Battery management systems

Specifications

Product Category	IGBT Modules	Product	IGBT Silicon Modules
Configuration	Single	Collector- Emitter Voltage VCEO Max	1.7 kV
Collector-Emitter Saturation Voltage	3.5 V	Continuous Collector Current at 25 C	88 A
Gate-Emitter Leakage Current	100 nA	Pd - Power Dissipation	680 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Maximum Gate Emitter Voltage	20 V	Mounting Style	Chassis Mount
Product Type	IGBT Modules	Series	High Voltage
Factory Pack Quantity	10	Subcategory	IGBTs
Technology	Si	Tradename	XPT
Unit Weight	1.058219 oz