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IXYP20N65C3D1 +BOM

Silicon Insulated Gate Bipolar Transistor semiconductor chip designed for high power applications

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IGBT PT 650 V 50 A 200 W Through Hole TO-220-3

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	Case Connection	COLLECTOR
Collector Current-Max (IC)	50 A	Collector-Emitter Voltage-Max	650 V
Configuration	SINGLE WITH BUILT-IN DIODE	Gate-Emitter Thr Voltage-Max	6 V
Gate-Emitter Voltage-Max	20 V	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	200 W	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	132 ns	Turn-on Time-Nom (ton)	51 ns
VCEsat-Max	2.5 V	Series	GenX3™, XPT™
IGBT Type	PT	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	50 A	Current - Collector Pulsed (Icm)	105 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A	Power - Max	200 W
Switching Energy	430µJ (on), 350µJ (off)	Input Type	Standard
Gate Charge	30 nC	Td (on/off) @ 25°C	19ns/80ns
Test Condition	400V, 20A, 20Ohm, 15V	Reverse Recovery Time (trr)	135 ns
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXYP20