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IXYX30N170CV1 +BOM

IGBT Transistors 1700V/108A High Voltage XPT IGBT

IGBT 1700 V 108 A 937 W Through Hole PLUS247™-3

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	XPT™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	108 A	Current - Collector Pulsed (Icm)	255 A
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 30A	Power - Max	937 W
Switching Energy	5.9mJ (on), 3.3mJ (off)	Input Type	Standard
Gate Charge	140 nC	Td (on/off) @ 25°C	28ns/150ns
Test Condition	850V, 30A, 2.7Ohm, 15V	Reverse Recovery Time (trr)	160 ns
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXYX30	Product Category:	IGBT Transistors
Technology:	Si	Mounting Style:	Through Hole
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	1.7 kV
Collector-Emitter Saturation Voltage:	4 V	Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A	Pd - Power Dissipation:	937 W
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 175 C
Packaging:	Tube	Continuous Collector Current Ic Max:	108 A
Gate-Emitter Leakage Current:	100 nA	Product Type:	IGBT Transistors
Factory Pack Quantity:	30	Subcategory:	IGBTs
Tradename:	XPT	Unit Weight:	0.454064 oz