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Trans RF BJT NPN 50V 0.8A 500mW 4-Pin Case UB
3-SMDManufacturer:
Mfr.Part #:
JANTXV2N2222AUB
Datasheet:
Mounting Style:
SMD/SMT
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
50 V
EDA/CAD Models:
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Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Surface Mount UB
Product Category: | Bipolar Transistors - BJT | Mounting Style: | SMD/SMT |
Transistor Polarity: | NPN | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 50 V | Collector- Base Voltage VCBO: | 75 V |
Emitter- Base Voltage VEBO: | 6 V | Collector-Emitter Saturation Voltage: | 300 mV |
Maximum DC Collector Current: | 800 mA | Pd - Power Dissipation: | 500 mW |
Gain Bandwidth Product fT: | - | Minimum Operating Temperature: | - 65 C |
Maximum Operating Temperature: | + 200 C | Packaging: | Waffle |
DC Collector/Base Gain hfe Min: | 75 at 1 mA, 10 VDC | DC Current Gain hFE Max: | 325 at 1 mA, 10 VDC |
Product Type: | BJTs - Bipolar Transistors | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Technology: | Si |
Unit Weight: | 0.127590 oz | Series | - |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 800 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V | Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 50nA | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 500 mW | Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) | Grade | Military |
Qualification | MIL-PRF-19500/255 | Mounting Type | Surface Mount |
Base Product Number | 2N2222 |
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Everything works fine! It would be nice to attach the driver in the description.