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JAN2N6301 +BOM

Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray

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Bipolar (BJT) Transistor NPN - Darlington 80 V 500 µA 75 W Through Hole TO-66 (TO-213AA)

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Military, MIL-PRF-19500/539
Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	500 µA
Voltage - Collector Emitter Breakdown (Max)	80 V	Vce Saturation (Max) @ Ib, Ic	3V @ 80mA, 8A
Current - Collector Cutoff (Max)	500µA	DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 4A, 3V
Power - Max	75 W	Frequency - Transition	-
Operating Temperature	-55°C ~ 200°C (TJ)	Mounting Type	Through Hole
feature-type	NPN	feature-configuration	Single
feature-number-of-elements-per-chip	1	feature-maximum-collector-emitter-voltage-v	80
feature-maximum-collector-base-voltage-v	80	feature-maximum-emitter-base-voltage-v	5
feature-maximum-base-emitter-saturation-voltage-v	2.8@4A@3V\|4@80mA@8A	feature-maximum-continuous-dc-collector-current-a	8
feature-minimum-dc-current-gain	500@1A@3V\|750@4A@3V\|100@8A@3V	feature-maximum-power-dissipation-mw	75000
feature-maximum-collector-emitter-saturation-voltage-v	2@16mA@4A\|3@80mA@8A	feature-packaging	Tray
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-escc-qualified
feature-military		feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc-exceeds-threshold	No