This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

JS28F128P33BF70A +BOM

High-speed Numonyx Flash

Manufacturer:

Alliance Memory, Inc.
Mfr.Part #:

JS28F128P33BF70A
Datasheet:

JS28F128P33BF70A Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for JS28F128P33BF70A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F128P33BF70A General Description

Organized into 64 sectors of 128KB each, the JS28F128P33BF70A also includes eight 1KB boot blocks for added flexibility and functionality. Its parallel interface simplifies integration into embedded systems, allowing for seamless operation within a range of devices. Additionally, this Flash memory chip boasts exceptional reliability and endurance, guaranteeing a minimum of 100,000 program/erase cycles per sector

Key Features

High performance
— 85 ns initial access
— 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/ byte (Typ)
— 1.8 V buffered programming at 7 μs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 20μA (Typ) for 64-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
2112 user-programmable OTP bits
— Selectable OTP Space in Main Array:
Four pre-defined 128-KByte blocks (top or bottom configuration)
Up to Full Array OTP Lockout
— Absolute write protection: VPP = VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56- Lead TSOP package (64, 128, 256, 512- Mbit)
— 64- Ball Numonyx™ Easy BGA package (64, 128, 256, 512- Mbit)
— Numonyx™ QUAD+ SCSP (64, 128, 256, 512- Mbit)
— 16-bit wide data bus

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	128Mbit	Memory Organization	8M x 16
Memory Interface	Parallel	Clock Frequency	52 MHz
Write Cycle Time - Word, Page	70ns	Access Time	70 ns
Voltage - Supply	2.3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TC)
Mounting Type	Surface Mount