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JS28F256J3F105A +BOM

32M x 8bit memory

JS28F256J3F105A General Description

In addition to its impressive performance capabilities, the JS28F256J3F105A chip also prioritizes data protection. It features a hardware data protection mechanism and offers various software protection options, ensuring that your valuable data remains secure. Furthermore, this flash memory chip utilizes a 16-bit data interface, further enhancing its compatibility and usability in a wide range of devices and applications. Its compliance with RoHS standards also demonstrates Intel's commitment to environmental sustainability

Key Features

  • Architecture
  • — Symmetrical 128-Kbyte blocks
  • — 256 Mbit (256 blocks)
  • — 128 Mbit (128 blocks)
  • — 64 Mbit (64 blocks)
  • — 32 Mbit (32 blocks)
  • Performance
  • — 75 ns Initial Access Speed (32,64,128 Mbit densities)
  • — 95 ns Initial Access Speed (256Mbit only)
  • — 25 ns 8-word and 4-word Asynchronous page-mode reads
  • — 32-Byte Write buffer; 4 µs per Byte Effective programming time
  • System Voltage
  • — VCC = 2.7 V to 3.6 V
  • — VCCQ = 2.7 V to 3.6 V
  • Packaging
  • — 56-Lead TSOP (32, 64, 128, 256 Mbit)
  • — 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
  • Security
  • — Enhanced security options for code protection
  • — 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
  • — Absolute protection with VPEN = GND
  • — Individual block locking
  • — Block erase/program lockout during power transitions
  • Software
  • — Program and erase suspend support
  • — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
  • Quality and Reliability
  • — Operating temperature: -40 °C to +85 °C
  • — 100K Minimum erase cycles per block
  • — 0.13 µm ETOX™ VIII Process technology

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 56 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 105 ns Alternate Memory Width 8
JESD-30 Code R-PDSO-G56 JESD-609 Code e3
Length 18.4 mm Memory Density 268435456 bit
Memory IC Type FLASH Memory Width 16
Moisture Sensitivity Level 3 Number of Functions 1
Number of Terminals 56 Number of Words 16777216 words
Number of Words Code 16000000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 16MX16 Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 Programming Voltage 2.7 V
Qualification Status Not Qualified Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish Matte Tin (Sn) Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Type NOR TYPE
Width 14 mm

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