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JS28F640P33BF70A +BOM

JS28F640P33BF70A TSOP-56 NOR FLASH ROHS

JS28F640P33BF70A General Description

The JS28F640P33BF70A from Intel is a high-performance 64Mb parallel NOR flash memory chip, designed for applications requiring fast data access. With a 3V voltage supply and 70 ns access time, this memory chip ensures efficient read and write operations. Its 32-byte page size enhances data transfer speed, making it ideal for use in demanding environments

Key Features

  • High performance
  • — 85/88 ns initial access
  • — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
  • — 25 ns asynchronous-page read mode
  • — 4-, 8-, 16-, and continuous-word burst mode
  • — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  • — 1.8 V buffered programming at 7 µs/byte (Typ)
  • Architecture
  • — Multi-Level Cell Technology: Highest Density at Lowest Cost
  • — Asymmetrically-blocked architecture
  • — Four 32-KByte parameter blocks: top or bottom configuration
  • — 128-KByte main blocks
  • Voltage and Power
  • —VCC(core) voltage: 1.7 V – 2.0 V
  • —VCCQ (I/O) voltage: 1.7 V – 3.6 V
  • — Standby current: 55 µA (Typ) for 256-Mbit
  • — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
  • Quality and Reliability
  • — Operating temperature: –40 °C to +85 °C
  • 1-Gbit in SCSP is –30 °C to +85 °C
  • — Minimum 100,000 erase cycles per block
  • — ETOX™ VIII process technology (130 nm)
  • Security
  • — One-Time Programmable Registers:
  • 64 unique factory device identifier bits
  • 64 user-programmable OTP bits
  • Additional 2048 user-programmable OTP bits
  • — Selectable OTP Space in Main Array:
  • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
  • — Absolute write protection: VPP= VSS
  • — Power-transition erase/program lockout
  • — Individual zero-latency block locking
  • — Individual block lock-down
  • Software
  • — 20 µs (Typ) program suspend
  • — 20 µs (Typ) erase suspend
  • —Intel® Flash Data Integrator optimized
  • — Basic Command Set and Extended Command Set compatible
  • — Common Flash Interface capable
  • Density and Packaging
  • — 64/128/256-Mbit densities in 56-Lead TSOP package
  • — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
  • — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
  • — 16-bit wide data bus

Specifications

Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Technology FLASH - NOR
Memory Size 64Mbit Memory Organization 4M x 16
Memory Interface Parallel Clock Frequency 40 MHz
Write Cycle Time - Word, Page 70ns Access Time 70 ns
Voltage - Supply 2.3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount

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