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MG06100S-BR1MM +BOM

IGBT Modules 600V 100A Dual

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IGBT Module Half Bridge 600 V 150 A 625 W Chassis Mount S3

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	Series	-
IGBT Type	-	Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V	Current - Collector (Ic) (Max)	150 A
Power - Max	625 W	Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max)	500 µA	Input Capacitance (Cies) @ Vce	5.3 nF @ 25 V
Input	Standard	NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Chassis Mount
Product Category:	IGBT Modules	Product:	IGBT Silicon Modules
Configuration:	Dual	Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.45 V	Continuous Collector Current at 25 C:	125 A
Gate-Emitter Leakage Current:	400 nA	Pd - Power Dissipation:	330 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 150 C
Packaging:	Bulk	Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Chassis Mount	Product Type:	IGBT Modules
Series:	MG06100S	Factory Pack Quantity:	50
Subcategory:	IGBTs	Technology:	Si
Unit Weight:	5.643834 oz