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TO-3P Packaged N-channel 600V 50A 150W Trans IGBT Chip
TO-3PManufacturer:
Mfr.Part #:
MGD623S
Datasheet:
ECCN (US):
EAR99
Automotive:
No
PPAP:
No
Channel Type:
N
EDA/CAD Models:
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IGBT 600 V 50 A 150 W Through Hole TO-3P
ECCN (US) | EAR99 | Part Status | Active |
Automotive | No | PPAP | No |
Channel Type | N | Configuration | Single |
Maximum Gate Emitter Voltage (V) | ±30 | Maximum Collector-Emitter Voltage (V) | 600 |
Typical Collector Emitter Saturation Voltage (V) | 1.8 | Maximum Continuous Collector Current (A) | 50 |
Maximum Gate Emitter Leakage Current (uA) | 0.5 | Maximum Power Dissipation (mW) | 150 |
Maximum Operating Temperature (°C) | 150 | Mounting | Through Hole |
PCB changed | 3 | Tab | Tab |
Pin Count | 3 | Lead Shape | Through Hole |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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The prices below are for reference only.
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