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MGF0911A +BOM

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN

  • Manufacturer:

    FUJITSU

  • Mfr.Part #:

    MGF0911A

  • Datasheet:

    MGF0911A Datasheet (PDF) pdf-icon

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

MGF0911A General Description

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN

Key Features

  • Class A operation
  • High output power
  • P1dB=41dBm(TYP) @2.3GHz
  • High power gain
  • GLP=11dB(TYP) @2.3GHz
  • High power added efficiency
  • hadd=40%(TYP) @2.3GHz,P1dB
  • Hermetically sealed metal-ceramic package with ceramic lid

Specifications

Part Life Cycle Code Obsolete Pin Count 2
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.29.00.75 Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 10 V
Drain Current-Max (ID) 2.6 A FET Technology JUNCTION
Highest Frequency Band S BAND JESD-30 Code R-CDFM-F2
Number of Elements 1 Number of Terminals 2
Operating Mode DEPLETION MODE Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 37.5 W
Power Gain-Min (Gp) 10 dB Qualification Status Not Qualified
Surface Mount YES Terminal Form FLAT
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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