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See Technical Specifications

NAND01GR3B2CZA6E +BOM

1G-bit NAND Flash Parallel 1.8V 128M x 8 25us 63-Pin VFBGA Tray

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

NAND01GR3B2CZA6E
Datasheet:

NAND01GR3B2CZA6E Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Models:

Request Free CAD Models for NAND01GR3B2CZA6E

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NAND01GR3B2CZA6E General Description

Boasting state-of-the-art error correction and wear-leveling algorithms, the NAND01GR3B2CZA6E goes above and beyond to maintain the integrity of your data and extend the chip's lifespan. This means you can trust that your information will remain safe and secure, even through countless read and write operations

Key Features

HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	1Gbit	Memory Organization	128M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	25ns	Access Time	25 ns
Voltage - Supply	1.7V ~ 1.95V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount