This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NAND512R3A2SZA6E +BOM

15000 ns access time

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

NAND512R3A2SZA6E
Datasheet:

NAND512R3A2SZA6E Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

63
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for NAND512R3A2SZA6E

NAND512R3A2SZA6E General Description

Whether you are working on data-intensive projects or require dependable storage for high-performance applications, the NAND512R3A2SZA6E ticks all the boxes with its impressive specifications and capabilities. Trust in this advanced NAND flash memory device to provide the speed, reliability, and efficiency you need to excel in your endeavors

Key Features

High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
Supply voltage: 1.8 V, 3.0 V
Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
Page Read/Program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Hardware Data Protection
– Program/Erase locked during Power transitions
Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
ECOPACK® packages
Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	63	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
JESD-30 Code	R-PBGA-B63	JESD-609 Code	e1
Length	11 mm	Memory Density	536870912 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	63
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX8
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Programming Voltage	1.8 V	Seated Height-Max	1.05 mm
Supply Voltage-Max (Vsup)	1.95 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	30	Type	SLC NAND TYPE
Width	9 mm