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PC28F512P33BFD +BOM
NOR Flash Memory
BGA-64-
Manufacturer:
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Mfr.Part #:
PC28F512P33BFD
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Datasheet:
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Mounting Style:
SMD/SMT
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Memory Size:
512 Mbit
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Supply Voltage - Min:
2.3 V
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Supply Voltage - Max:
3.6 V
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EDA/CAD Models:
Availability: 9100 PCS
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PC28F512P33BFD General Description
Intel's PC28F512P33BFD flash memory chip is an advanced storage solution with a host of features designed to ensure fast and secure data transfer. With a burst mode for accelerated data transfer, support for both synchronous and asynchronous read operations, and built-in error correction capabilities, this chip offers reliable performance for a variety of electronic devices. Its security feature adds an extra layer of protection, making it an ideal choice for applications requiring secure data storage
Key Features
- High-Performance Read, Program and Erase
- – 96 ns initial read access
- – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
- – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
- – 8-, 16-, and continuous-word synchronous-burst Reads
- – Programmable WAIT configuration
- – Customer-configurable output driver impedance
- – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
- – Block Erase: 0.9 s per block (typ)
- – 20 μs (typ) program/erase suspend
- Architecture
- – 16-bit wide data bus
- – Multi-Level Cell Technology
- – Symmetrically-Blocked Array Architecture
- – 256-Kbyte Erase Blocks
- – 1-Gbit device: Eight 128-Mbit partitions
- – 512-Mbit device: Eight 64-Mbit partitions
- – 256-Mbit device: Eight 32-Mbit partitions
- – 128-Mbit device: Eight 16-Mbit partitions
- – Read-While-Program and Read-While-Erase
- – Status Register for partition/device status
- – Blank Check feature
- Quality and Reliability
- – Expanded temperature: –30 °C to +85 °C
- – Minimum 100,000 erase cycles per block
- – 65nm Process Technology
- Power
- – Core voltage: 1.7 V - 2.0 V
- – I/O voltage: 1.7 V - 2.0 V
- – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
- – Deep Power-Down mode: 2 μA (typ)
- – Automatic Power Savings mode
- – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
- Software
- – Micron® Flash data integrator (FDI) optimized
- – Basic command set (BCS) and extended command set (ECS) compatible
- – Common Flash interface (CFI) capable
- Security
- – One-time programmable (OTP) space
- 64 unique factory device identifier bits
- 2112 user-programmable OTP bits
- – Absolute write protection: VPP = GND
- – Power-transition erase/program lockout
- – Individual zero latency block locking
- – Individual block lock-down
- Density and packaging
- – 128Mb, 256Mb, 512Mbit, and 1-Gbit
- – Address-data multiplexed and non-multiplexed interfaces
- – 64-Ball Easy BGA
Specifications
Product Category | NOR Flash | Mounting Style | SMD/SMT |
Memory Size | 512 Mbit | Supply Voltage - Min | 2.3 V |
Supply Voltage - Max | 3.6 V | Active Read Current - Max | 31 mA |
Interface Type | Parallel | Maximum Clock Frequency | 52 MHz |
Organization | 32 M x 16 | Data Bus Width | 16 bit |
Timing Type | Asynchronous, Synchronous | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 85 C | Moisture Sensitive | Yes |
Product Type | NOR Flash | Speed | 95 ns |
Factory Pack Quantity | 300 | Subcategory | Memory & Data Storage |
Service Policies and Others
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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We promise to provide 365 days quality assurance service for all our products.
In Stock: 9,100
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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