This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

PD55015-E +BOM

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Manufacturer:

ST
Mfr.Part #:

PD55015-E
Datasheet:

PD55015-E Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

10
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for PD55015-E

PD55015-E General Description

The PD55015-E is a high-performance RF power transistor that offers exceptional gain and linearity for a wide range of industrial and commercial applications. With its innovative LDMOS technology and PowerSO-10RF package, this transistor delivers reliable and efficient operation at frequencies of up to 1 GHz. Whether you're designing car mobile radios or other high-frequency devices, the PD55015-E is an ideal choice for achieving superior performance

Key Features

Suitable for amplification
Wide operating range
High IP3 performance
Flexible design options

Specifications

Source Content uid	PD55015-E	Part Life Cycle Code	Active
Pin Count	10	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	23 Weeks
Additional Feature	HIGH RELIABILITY	Application	AMPLIFIER
Case Connection	SOURCE	Configuration	SINGLE
FET Technology	METAL-OXIDE SEMICONDUCTOR	Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
JESD-30 Code	R-PDSO-G2	Moisture Sensitivity Level	3
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	250
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON