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PDTC114ET +BOM

NXP Semiconductors

PDTC114ET General Description

NPN resistor-equipped transistors

PDTC114ET

Key Features

BUILT IN BAIS RESISTOR RATIO IS 1

Application

SWITCHING

Specifications

Source Content uid PDTC114ET Pbfree Code Yes
Part Life Cycle Code Transferred Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 3.5 pF Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin (Sn) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz VCEsat-Max 0.3 V

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In Stock: 6,955

Minimum Order: 1

Qty. Unit Price Ext. Price
20+ $0.027 $0.54
200+ $0.021 $4.20
600+ $0.019 $11.40
3000+ $0.017 $51.00
9000+ $0.016 $144.00
21000+ $0.015 $315.00

The prices below are for reference only.

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