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PDTD123YT +BOM

NXP Semiconductors

PDTD123YT General Description

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.PNP complement: PDTB123YT

Key Features

  • Built-in bias resistors
  • Simplifies circuit design
  • 500 mA output current capability
  • Reduces component count
  • Reduces pick and place costs
  • ± 10 % resistor ratio tolerance

Application

  • Digital application in industrial segment
  • Controlling IC inputs
  • Cost-saving alternative to BC817 series in digital applications
  • Switching loads

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Collector Current-Max (IC) 0.5 A
DC Current Gain-Min (hFE) 70 JESD-609 Code e0
Number of Elements 1 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.25 W Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb) Transistor Element Material SILICON

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