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PHE13005 +BOM

Advanced BJTs offering high current gain, low noise figure, and fast switching time

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PHE13005 General Description

Bipolar (BJT) Transistor NPN 400 V 4 A 75 W Through Hole TO-220AB

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 400 V Collector- Base Voltage VCBO 700 V
Emitter- Base Voltage VEBO 9 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 4 A Pd - Power Dissipation 75 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Continuous Collector Current 4 A Height 9.4 mm
Length 10.3 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 50 Subcategory Transistors
Technology Si Width 4.7 mm
Part # Aliases PHE13005,127 Transistor Type NPN
Current - Collector (Ic) (Max) 4 A Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V Power - Max 75 W
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Base Product Number PHE13

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