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See Technical Specifications

PUMH18,115 +BOM

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Manufacturer:

Nexperia Semiconductor (NXP)
Mfr.Part #:

PUMH18,115
Datasheet:

PUMH18,115 Datasheet (PDF)
Mount:

Surface Mount
Number Of Pins:

6
Ambient Temperature Range High:

150 °C
Collector Base Voltage (VCBO):

50 V
EDA/CAD Models:

Request Free CAD Models for PUMH18,115

PUMH18,115 General Description

BRT TRANSISTOR, NPN, 50V, 100MA, 22KOHM / OPEN, 6-SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; RF Transistor Case:SOT-363; No. of Pins:6 ;RoHS Compliant: Yes

Key Features

100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified

Nexperia Semiconductor (NXP) Original Stock

Application

Low current peripheral driver
Control of IC inputs
Replacement of general-purpose transistors in digital applications

Specifications

Mount	Surface Mount	Number of Pins	6
Ambient Temperature Range High	150 °C	Collector Base Voltage (VCBO)	50 V
Collector Emitter Breakdown Voltage	50 V	Collector Emitter Saturation Voltage	100 mV
Collector Emitter Voltage (VCEO)	50 V	Element Configuration	Dual
Emitter Base Voltage (VEBO)	7 V	hFE Min	50
Max Breakdown Voltage	50 V	Max Collector Current	100 mA
Max Junction Temperature (Tj)	150 °C	Max Operating Temperature	150 °C
Max Power Dissipation	300 mW	Min Operating Temperature	-65 °C
Number of Elements	2	Packaging	Cut Tape (CT)
Polarity	NPN	Power Dissipation	300 mW
Height	1 mm	Length	2.2 mm
Width	1.35 mm