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See Technical Specifications

PUMD9,115 +BOM

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

Manufacturer:

Nexperia USA Inc.
Mfr.Part #:

PUMD9,115
Datasheet:

PUMD9,115 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

6
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for PUMD9,115

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PUMD9,115 General Description

The PUMD9 is a versatile NPN/PNP Resistor-Equipped double Transistor (RET) packaged in a compact SOT363 (SC-88) Surface-Mounted Device (SMD) plastic housing. With its small size and dual transistor configuration, this component is ideal for space-constrained electronic applications where both NPN and PNP transistors are needed. Its NPN/NPN complement, the PUMH9, and PNP/PNP complement, the PUMB9, provide flexibility in circuit design and compatibility with various complementary configurations

Key Features

Enhanced signal quality with better shielding
Reduced power consumption for lower heat generation
Maintaining signal integrity in high-frequency applications

Application

Optimized automotive functions
BC847/BC857 substitute
Flexible load management

Specifications

Source Content uid	PUMD9,115	Part Life Cycle Code	Active
Pin Count	6	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC)	0.1 A	Collector-Emitter Voltage-Max	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	DC Current Gain-Min (hFE)	100
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	NPN AND PNP
Qualification Status	Not Qualified	Reference Standard	AEC-Q101; IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA	Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms	Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA	Power - Max	300mW
Mounting Type	Surface Mount	Base Product Number	PUMD9