This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

RC48F4400P0VB0EJ +BOM

NOR FLASH EASYBGA-64(8x10) ROHS

Manufacturer:

MICRON TECHNOLOGY INC
Mfr.Part #:

RC48F4400P0VB0EJ
Datasheet:

RC48F4400P0VB0EJ Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for RC48F4400P0VB0EJ

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RC48F4400P0VB0EJ General Description

For automotive, industrial, and networking devices requiring high-performance non-volatile memory, the Intel RC48F4400P0VB0EJ 4GB NOR flash memory chip is the ideal choice. Its parallel interface, 1.8V voltage, and clock frequency of up to 108MHz ensure superior performance, while the fast read access time of 50ns delivers quick data retrieval. Packaged in a reliable 64-ball VFBGA, with a typical erase time of 3ms and program time of 12µs, this chip is efficient and powerful. Additionally, it supports block locking and unlocking, security ID, and extended addressing modes, providing flexible data storage options for various applications

Key Features

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to-data output
synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— Absolute write protection: VPP = VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP
package
— 64/128/256/512-Mbit densities in 64-Ball
Intel® Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel® QUAD+ SCSP
— 16-bit wide data bus

Specifications

Pbfree Code	No	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Access Time-Max	17 ns
Additional Feature	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE	Boot Block	BOTTOM/TOP
Command User Interface	YES	Common Flash Interface	YES
Data Polling	NO	JESD-30 Code	R-PBGA-B64
JESD-609 Code	e0	Length	13 mm
Memory Density	536870912 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	8, 510	Number of Terminals	64
Number of Words	33554432 words	Number of Words Code	32000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	32MX16
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	235
Power Supplies	1.8,1.8/3.3 V	Programming Voltage	1.8 V
Qualification Status	Not Qualified	Seated Height-Max	1.2 mm
Sector Size	16K,64K	Standby Current-Max	0.00042 A
Supply Current-Max	0.031 mA	Supply Voltage-Max (Vsup)	2 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	Tin/Lead/Silver (Sn/Pb/Ag)
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	NO	Type	NOR TYPE
Width	10 mm