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RC28F256P33TFE +BOM

This memory chip is housed in a compact 64-pin EZBGA package

RC28F256P33TFE General Description

Intel's RC28F256P33TFE flash memory chip is a game-changer in the world of storage solutions. Offering a spacious 256Mb capacity (32MB), this chip operates on a 3.3-volt power supply and utilizes a parallel interface for seamless data transfer. Its reliability and endurance make it a standout choice for applications requiring frequent read and write operations in embedded systems, automotive electronics, industrial control systems, and consumer electronics. With features like block erase, sector erase, and byte programming, this chip provides unparalleled flexibility in data manipulation, catering to a wide range of user needs. Its compact size and low power consumption make it a top contender for space-constrained and power-sensitive designs in the tech industry

Key Features

  • High performance
  • — 85/88 ns initial access
  • — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
  • — 25 ns asynchronous-page read mode
  • — 4-, 8-, 16-, and continuous-word burst mode
  • — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  • — 1.8 V buffered programming at 7 µs/byte (Typ)
  • Architecture
  • — Multi-Level Cell Technology: Highest Density at Lowest Cost
  • — Asymmetrically-blocked architecture
  • — Four 32-KByte parameter blocks: top or bottom configuration
  • — 128-KByte main blocks
  • Voltage and Power
  • —VCC(core) voltage: 1.7 V – 2.0 V
  • —VCCQ (I/O) voltage: 1.7 V – 3.6 V
  • — Standby current: 55 µA (Typ) for 256-Mbit
  • — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
  • Quality and Reliability
  • — Operating temperature: –40 °C to +85 °C
  • 1-Gbit in SCSP is –30 °C to +85 °C
  • — Minimum 100,000 erase cycles per block
  • — ETOX™ VIII process technology (130 nm)
  • Security
  • — One-Time Programmable Registers:
  • 64 unique factory device identifier bits
  • 64 user-programmable OTP bits
  • Additional 2048 user-programmable OTP bits
  • — Selectable OTP Space in Main Array:
  • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
  • — Absolute write protection: VPP= VSS
  • — Power-transition erase/program lockout
  • — Individual zero-latency block locking
  • — Individual block lock-down
  • Software
  • — 20 µs (Typ) program suspend
  • — 20 µs (Typ) erase suspend
  • —Intel® Flash Data Integrator optimized
  • — Basic Command Set and Extended Command Set compatible
  • — Common Flash Interface capable
  • Density and Packaging
  • — 64/128/256-Mbit densities in 56-Lead TSOP package
  • — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
  • — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
  • — 16-bit wide data bus

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 95 ns Additional Feature TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE
Boot Block TOP Command User Interface YES
Common Flash Interface YES Data Polling NO
JESD-30 Code R-PBGA-B64 JESD-609 Code e1
Length 13 mm Memory Density 268435456 bit
Memory IC Type FLASH Memory Width 16
Number of Functions 1 Number of Sectors/Size 4,255
Number of Terminals 64 Number of Words 16777216 words
Number of Words Code 16000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 16MX16 Parallel/Serial PARALLEL
Power Supplies 2.5/3.3 V Programming Voltage 3 V
Qualification Status Not Qualified Seated Height-Max 1.2 mm
Sector Size 16K,64K Standby Current-Max 0.00021 A
Supply Current-Max 0.031 mA Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.3 V Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish TIN SILVER COPPER
Terminal Form BALL Terminal Pitch 1 mm
Terminal Position BOTTOM Toggle Bit NO
Type NOR TYPE Width 10 mm

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