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RCD050N20TL +BOM

MOSFET 10V Drive Nch MOSFET

RCD050N20TL General Description

N-Channel 200 V 5A (Ta) 20W (Tc) Surface Mount CPT3

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 5 A Rds On - Drain-Source Resistance 470 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3.25 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20 W
Channel Mode Enhancement Configuration Single
Fall Time 11 ns Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 22 ns Typical Turn-On Delay Time 17 ns
Part # Aliases RCD050N20 Unit Weight 0.011640 oz

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