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RN1105,LF(CT +BOM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

RN1105,LF(CT General Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

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Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors Series -
Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz Power - Max 100 mW
Mounting Type Surface Mount Base Product Number RN1105
feature-packaging Tape and Reel feature-pin-count 3
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-eccn-code EAR99
feature-svhc feature-svhc-exceeds-threshold No

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