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RN2701,LF +BOM

Reliable and efficient solution for modern electronic system

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    RN2701,LF

  • Datasheet:

    RN2701,LF Datasheet (PDF) pdf-icon

  • Configuration:

    Dual

  • Transistor Polarity:

    PNP

  • Mounting Style:

    SMD/SMT

  • DC Collector/Base Gain Hfe Min:

    30

RN2701,LF General Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount USV

Toshiba Inventory
Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - Pre-Biased Configuration Dual
Transistor Polarity PNP Mounting Style SMD/SMT
DC Collector/Base Gain hfe Min 30 Collector- Emitter Voltage VCEO Max - 50 V
Pd - Power Dissipation 200 mW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Collector- Base Voltage VCBO - 50 V
Emitter- Base Voltage VEBO - 10 V Maximum DC Collector Current - 100 mA
Product Type BJTs - Bipolar Transistors - Pre-Biased Qualification AEC-Q101
Factory Pack Quantity 3000 Subcategory Transistors
Unit Weight 0.000219 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.078 $0.08
200+ $0.031 $6.20
500+ $0.030 $15.00
1000+ $0.030 $30.00

The prices below are for reference only.

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