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RN1107,LF(CT +BOM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    RN1107,LF(CT

  • Datasheet:

    RN1107,LF(CT Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    NPN

  • Typical Input Resistor:

    10 kOhms

  • Typical Resistor Ratio:

    0.213

  • Mounting Style:

    SMD/SMT

RN1107,LF(CT General Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

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Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - Pre-Biased Transistor Polarity NPN
Typical Input Resistor 10 kOhms Typical Resistor Ratio 0.213
Mounting Style SMD/SMT DC Collector/Base Gain hfe Min 80
Collector- Emitter Voltage VCEO Max 50 V Continuous Collector Current 100 mA
Pd - Power Dissipation 100 mW Series RN1107
Emitter- Base Voltage VEBO 6 V Product Type BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity 3000 Subcategory Transistors
Unit Weight 0.000212 oz

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