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See Technical Specifications

RN1306(TE85L,F) +BOM

High-gain amplifier for low-frequency applications, suitable for industrial control systems

Manufacturer:

Toshiba
Mfr.Part #:

RN1306(TE85L,F)
Datasheet:

RN1306(TE85L,F) Datasheet (PDF)
Configuration:

Single
Transistor Polarity:

NPN
Typical Input Resistor:

4.7 kOhms
Typical Resistor Ratio:

0.1

Avaq Semiconductor offers the highly versatile and reliable RN1306(TE85L,F) driver, produced by Toshiba. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the RN1306(TE85L,F).

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	Bipolar Transistors - Pre-Biased	Configuration	Single
Transistor Polarity	NPN	Typical Input Resistor	4.7 kOhms
Typical Resistor Ratio	0.1	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80	Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA	Peak DC Collector Current	100 mA
Pd - Power Dissipation	100 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	RN1306
DC Current Gain hFE Max	80	Height	0.9 mm
Length	2 mm	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	6000	Subcategory	Transistors
Width	1.25 mm