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RN1131MFV(TL3,T) +BOM

Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    RN1131MFV(TL3,T)

  • Datasheet:

    RN1131MFV(TL3,T) Datasheet (PDF) pdf-icon

  • Configuration:

    Single

  • Transistor Polarity:

    NPN

  • Typical Input Resistor:

    100 kOhms

  • Mounting Style:

    SMD/SMT

RN1131MFV(TL3,T) General Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

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Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - Pre-Biased Configuration Single
Transistor Polarity NPN Typical Input Resistor 100 kOhms
Mounting Style SMD/SMT DC Collector/Base Gain hfe Min 120
Collector- Emitter Voltage VCEO Max 50 V Continuous Collector Current 100 mA
Pd - Power Dissipation 150 mW Series RN1131MFV
Emitter- Base Voltage VEBO 5 V Maximum DC Collector Current 100 mA
Product Type BJTs - Bipolar Transistors - Pre-Biased Factory Pack Quantity 8000
Subcategory Transistors

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