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RN2301(TE85L,F) +BOM

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    RN2301(TE85L,F)

  • Datasheet:

    RN2301(TE85L,F) Datasheet (PDF) pdf-icon

  • Configuration:

    Single

  • Transistor Polarity:

    PNP

  • Typical Input Resistor:

    4.7 kOhms

  • Typical Resistor Ratio:

    1

RN2301(TE85L,F) General Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

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Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - Pre-Biased Configuration Single
Transistor Polarity PNP Typical Input Resistor 4.7 kOhms
Typical Resistor Ratio 1 Mounting Style SMD/SMT
DC Collector/Base Gain hfe Min 30 Collector- Emitter Voltage VCEO Max 50 V
Continuous Collector Current - 100 mA Peak DC Collector Current 100 mA
Pd - Power Dissipation 100 mW Maximum Operating Temperature + 150 C
Series RN2301 DC Current Gain hFE Max 30
Height 0.9 mm Length 2 mm
Product Type BJTs - Bipolar Transistors - Pre-Biased Factory Pack Quantity 3000
Subcategory Transistors Width 1.25 mm
Unit Weight 0.000988 oz

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