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RQ3E120GNTB +BOM
Description of Product: Transistor N-Channel with 30V and ±12A, 8-Pin HSMT, Tape and Reel
HSMT-8-
Manufacturer:
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Mfr.Part #:
RQ3E120GNTB
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Datasheet:
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REACH:
Details
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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EDA/CAD Models:
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Availability: 5601 PCS
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RQ3E120GNTB General Description
Meet the RQ3E120GNTB Power Field-Effect Transistor, a cutting-edge electronic device that boasts HALOGEN FREE AND ROHS COMPLIANT properties, aligning with modern environmental standards. Equipped with 1-Element and housed in a compact HSMT8 package with 8 pins, this transistor offers easy installation and compatibility with existing circuitry. Whether you're designing industrial machinery or consumer electronics, this reliable component is a top choice for engineers seeking quality and innovation in their projects
Application
SWITCHINGSpecifications
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 12 A |
Rds On - Drain-Source Resistance | 8.8 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 10 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 3.4 ns |
Forward Transconductance - Min | 10 S | Product Type | MOSFET |
Rise Time | 4.5 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 25.5 ns | Typical Turn-On Delay Time | 9.6 ns |
Part # Aliases | RQ3E120GN | Unit Weight | 0.006907 oz |
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