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RQ3E180BNTB1 +BOM
High-power MOSFET array for demanding applications
HSMT-8-
Manufacturer:
-
Mfr.Part #:
RQ3E180BNTB1
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Datasheet:
-
Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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RQ3E180BNTB1 General Description
N-Channel 30 V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 39 A | Rds On - Drain-Source Resistance | 3.9 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 72 nC | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 20 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 79 ns |
Product Type | MOSFET | Rise Time | 63 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 138 ns | Typical Turn-On Delay Time | 14 ns |
Part # Aliases | RQ3E180BN |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.726 | $1.73 |
200+ | $0.690 | $138.00 |
500+ | $0.667 | $333.50 |
1000+ | $0.654 | $654.00 |
The prices below are for reference only.