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RU1C001UNTCL +BOM

N-channel small signal field-effect transistor with 0.1A I(D) and 20V capability, suitable for use in electronic devices

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RU1C001UNTCL
Datasheet:

RU1C001UNTCL Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for RU1C001UNTCL

Email: [email protected]

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Tel: +852 95804164

RU1C001UNTCL General Description

The RU1C001UNTCL is a small signal field-effect transistor designed for various applications requiring low current and voltage requirements. With a maximum current rating of 0.1A and a voltage rating of 20V, this transistor is ideal for low-power electronic circuits

Key Features

High-Quality Materials and Workmanship
Easy Maintenance and Repair
Durable Construction for Long-Lasting Usage

Application

Smart door locks
Safety sensors
Network switches

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	100 mA	Rds On - Drain-Source Resistance	2.5 Ohms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	300 mV
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 mW	Channel Mode	Enhancement
Series	RU1C001UN	Configuration	Single
Fall Time	38 ns	Forward Transconductance - Min	180 mS
Product Type	MOSFET	Rise Time	4 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	5 ns	Part # Aliases	RU1C001UN
Unit Weight	0.000212 oz