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RUE002N02TL +BOM

N-Channel MOSFET for Small Signal Applications, 20V, 0.2A

email Email: [email protected]
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RUE002N02TL General Description

N-Channel 20 V 200mA (Ta) 150mW (Ta) Surface Mount EMT3

Key Features

1) Fast switching speed.

2) Low voltage drive (1.2V) makes this device ideal for portable equipment.

3) Drive circuits can be simple.

Application

Switching

Specifications

Pbfree Code Yes Part Life Cycle Code Not Recommended
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.2 A Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G3
JESD-609 Code e1 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 4,091

Minimum Order: 1

Qty. Unit Price Ext. Price
10+ $0.053 $0.53
100+ $0.043 $4.30
300+ $0.038 $11.40
3000+ $0.034 $102.00
6000+ $0.030 $180.00
9000+ $0.029 $261.00

The prices below are for reference only.

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