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See Technical Specifications

SD214DE +BOM

HERMETIC SEALED PACKAGE-4 housing a Single-Element N-Channel Silicon FET with 0.05A Drain Current and 20V Voltage Rating, TO-72 Enclosure

High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB
Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm
Low Feedthrough and Feedback Transients
Low Capacitance:
–Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
–Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
–Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
No protection Diode from Gate to Substrate for Very High Impedance Applications
Maximum Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . ±40V

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	4	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.90.00.00
Additional Feature	LOGIC LEVEL COMPATIBLE	Case Connection	SUBSTRATE
Configuration	SINGLE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	0.05 A	Drain-source On Resistance-Max	70 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	0.5 pF
JEDEC-95 Code	TO-72	JESD-30 Code	O-MBCY-W4
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	125 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	1.2 W	Power Dissipation-Max (Abs)	0.3 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	WIRE	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON