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SGW30N60 +BOM
The SGW30N60 from Infineon is an IGBT Transistor designed to handle currents up to 41A and voltages up to 600V
TO-247-3-
Manufacturer:
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Mfr.Part #:
SGW30N60
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
600 V
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EDA/CAD Models:
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Availability: 6771 PCS
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SGW30N60 General Description
In addition to its robust design, the SGW30N60 also boasts a range of built-in protection features that guarantee safe operation under varying conditions. From short-circuit to overcurrent and overtemperature protection, this power module has you covered. Plus, its low saturation voltage and minimal switching losses contribute to enhanced efficiency and reduced heat generation, leading to a more cost-effective and reliable solution for your power switching needs
Key Features
- Precise current sensing and monitoring
- Overcurrent protection for safe operation
- Robust against temperature variations
Application
- Powerful motor control
- Efficient power factor
- Reliable UPS system
- Advanced inverter technology
- Precise welding equipment
- Energy-saving ballasts
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | SGW30N60 | Continuous Collector Current Ic Max | 41 A |
Height | 20.95 mm | Length | 15.9 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 240 |
Subcategory | IGBTs | Width | 5.3 mm |
Part # Aliases | SGW3N6XK SP000012467 SGW30N60FKSA1 | Unit Weight | 1.340411 oz |
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In Stock: 6,771
Minimum Order: 1
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