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SI3493DDV-T1-GE3 +BOM

MOSFET -20V Vds 8V Vgs TSOP-6

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SI3493DDV-T1-GE3 General Description

P-Channel 20 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Key Features

  • TrenchFET® Gen III p-channel power MOSFET
  • RDS(on) rating at VGS = -1.8 V
  • 100 % Rg and UIS tested

    • Application

    SWITCHING

    Specifications

    FET Type P-Channel Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 8A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 7.5A, 4.5V
    Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
    Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1825 pF @ 10 V
    FET Feature - Power Dissipation (Max) 3.6W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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