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SIHFL9110TR-GE3 +BOM

SOT-223 packaged P-Channel MOSFET designed for applications requiring a 100V voltage handling capability and supporting currents up to 1

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SIHFL9110TR-GE3 General Description

P-Channel 100 V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Vishay Inventory

Key Features

  • Surface-mount
  • Available in tape and reel
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • P-channel
  • Fast switching
  • Ease of paralleling
    • Vishay Original Stock
    Vishay Inventory

    Specifications

    Product Category MOSFET REACH Details
    Technology Si Mounting Style SMD/SMT
    Transistor Polarity P-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 1.1 A
    Rds On - Drain-Source Resistance 1.2 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 8.7 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 3.1 W Channel Mode Enhancement
    Series SIH Configuration Single
    Fall Time 17 ns Forward Transconductance - Min 0.82 S
    Product Type MOSFET Rise Time 27 ns
    Factory Pack Quantity 2500 Subcategory MOSFETs
    Transistor Type 1 P-Channel Typical Turn-Off Delay Time 15 ns
    Typical Turn-On Delay Time 10 ns Unit Weight 0.008818 oz

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