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SIHG22N60AEL-GE3 +BOM

N-Channel 600 V 21A (Tc) 208W (Tc) Through Hole TO-247AC

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SIHG22N60AEL-GE3 General Description

N-Channel 600 V 21A (Tc) 208W (Tc) Through Hole TO-247AC

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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 21 A Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 41 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 208 W
Channel Mode Enhancement Series EL
Configuration Single Fall Time 28 ns
Forward Transconductance - Min 16 S Product Type MOSFET
Rise Time 24 ns Factory Pack Quantity 1
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 86 ns Typical Turn-On Delay Time 27 ns
Unit Weight 0.211644 oz

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