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SIHG73N60E-GE3 +BOM
MOSFET 600V 39MOHM@10V 73A N-CH E-SRS
TO-247-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SIHG73N60E-GE3
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600 V
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Current - Continuous Drain (Id) @ 25°C:
73A (Tc)
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EDA/CAD Models:
Availability: 9164 PCS
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SIHG73N60E-GE3 General Description
MOSFET, N-CH, 650V, 73A, TO247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:520W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Key Features
Application
- oSwitch mode power supplies (SMPS)
- oPower factor correction power supplies (PFC)
- oLighting
- oHigh-intensity discharge (HID)
- oFluorescent ballast lighting
- oIndustrial
- oWelding
- oInduction heating
- oMotor drives
- oBattery chargers
- oRenewable energy
- oSolar (PV inverters)
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V | Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 39mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 362 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 100 V |
Power Dissipation (Max) | 520W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | SIHG73 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 9,164
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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