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SIHW73N60E-GE3 +BOM

MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS

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SIHW73N60E-GE3 General Description

N-Channel 600 V 73A (Tc) 520W (Tc) Through Hole TO-247AD

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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 73 A Rds On - Drain-Source Resistance 39 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 241 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 520 W
Channel Mode Enhancement Series E
Configuration Single Fall Time 120 ns
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 105 ns
Factory Pack Quantity 480 Subcategory MOSFETs
Typical Turn-Off Delay Time 290 ns Typical Turn-On Delay Time 63 ns
Width 5.31 mm Unit Weight 0.211644 oz

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