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Insulated Gate Bipolar Transistor SKP10N60A
TO-220-3Manufacturer:
Mfr.Part #:
SKP10N60A
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
EDA/CAD Models:
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IGBT NPT 600 V 20 A 92 W Through Hole PG-TO220-3-1
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | SKP10N60 | Continuous Collector Current Ic Max | 20 A |
Height | 9.25 mm | Length | 10 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 500 |
Subcategory | IGBTs | Width | 4.4 mm |
Part # Aliases | SKP10N60AXK SP000683144 SKP10N60AXKSA1 | Unit Weight | 0.211644 oz |
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