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125W Insulated Gate Bipolar Transistor with Non-Punch Through Technology
TO-247-3Manufacturer:
Mfr.Part #:
SKW07N120
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
EDA/CAD Models:
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The unparalleled combination of a fast switching speed and low gate charge in the SKW07N120 power MOSFET transistor enables high-frequency operation and reduces switching losses, effectively enhancing the efficiency and performance of the applications it serves. Housed in a TO-247 package, the transistor also offers excellent thermal conductivity for effective heat dissipation, ensuring optimal operating temperatures and increased reliability
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | SKW07N120 | Continuous Collector Current Ic Max | 16.5 A |
Height | 20.95 mm | Length | 15.9 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 240 |
Subcategory | IGBTs | Width | 5.3 mm |
Part # Aliases | SKW07N120XK SP000012569 SKW07N120FKSA1 | Unit Weight | 1.340411 oz |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $10.132 | $10.13 |
200+ | $3.921 | $784.20 |
500+ | $3.783 | $1,891.50 |
1000+ | $3.715 | $3,715.00 |
The prices below are for reference only.
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