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See Technical Specifications

SQ3418EEV-T1-GE3 +BOM

MOSFET 40V 8A 5W N-Ch Automotive

Manufacturer:

VISHAY
Mfr.Part #:

SQ3418EEV-T1-GE3
Datasheet:

SQ3418EEV-T1-GE3 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

8A (Tc)
EDA/CAD Models:

Request Free CAD Models for SQ3418EEV-T1-GE3

SQ3418EEV-T1-GE3 General Description

Power Field-Effect Transistor, 7.4A I(D), 40V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Key Features

Halogen-free According to IEC 61249-2-21 Definition,TrenchFET® Power MOSFET,Typical ESD Protection 800 V

Specifications

Series	-	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)	Rds On (Max) @ Id, Vgs	32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 25 V	FET Feature	-
Mounting Type	Surface Mount	Base Product Number	SQ3418