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SS8050-G +BOM

SS8050-G BJT: A versatile NPN transistor capable of handling currents up to 1.5A and voltages of 40V

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SS8050-G General Description

Bipolar (BJT) Transistor NPN 25 V 1.5 A 100MHz 300 mW Surface Mount SOT-23-3

Key Features

  • NPN transistor with high current and low voltage characteristics
  • Maximum current: 5A
  • Low saturation voltage and high gain value

Application

  • Signal amplification
  • LED drivers

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 25 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1.5 A Pd - Power Dissipation 300 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C DC Collector/Base Gain hfe Min 40
DC Current Gain hFE Max 350 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Unit Weight 0.000282 oz

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In Stock: 6,050

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.076 $0.08
200+ $0.029 $5.80
500+ $0.028 $14.00
1000+ $0.028 $28.00

The prices below are for reference only.

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