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Lead-free N-channel JFET SOT-23 low noise amplifier
SOT-23Manufacturer:
Mfr.Part #:
SST201-T1-E3
Datasheet:
FET Type:
N-Channel
Voltage - Breakdown (V(BR)GSS):
40 V
Current - Drain (Idss) @ Vds (Vgs=0):
200 µA @ 15 V
Voltage - Cutoff (VGS Off) @ Id:
300 mV @ 10 nA
EDA/CAD Models:
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Featuring a maximum gate-source cutoff voltage of -1.5V and a power dissipation of 350mW, the SST201-T1-E3 is capable of handling high-stress environments while maintaining efficient operation. Its transistor case style TO-236 and 3-pin configuration make it easy to integrate into existing circuitry
Category | Discrete Semiconductor ProductsTransistorsJFETs | Series | - |
FET Type | N-Channel | Voltage - Breakdown (V(BR)GSS) | 40 V |
Current - Drain (Idss) @ Vds (Vgs=0) | 200 µA @ 15 V | Voltage - Cutoff (VGS off) @ Id | 300 mV @ 10 nA |
Input Capacitance (Ciss) (Max) @ Vds | 4.5pF @ 15V | Power - Max | 350 mW |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SST201 | feature-material | |
feature-channel-type | N | feature-configuration | Single |
feature-maximum-gate-source-voltage-v | -40 | feature-maximum-drain-gate-voltage-v | -40 |
feature-maximum-power-dissipation-mw | 350 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 3 | |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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12hr.
Took for the voltage converter, everything works. Delivery to minsk-20 days.