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STB6NK60ZT4 +BOM

N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STB6NK60ZT4
Datasheet:

STB6NK60ZT4 Datasheet (PDF)
Series:

SuperMESH™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

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Email: [email protected]

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Tel: +852 95804164

STB6NK60ZT4 General Description

STMicroelectronics' STB6NK60ZT4 MOSFET stands out in the market with its advanced SuperMESH™ technology. By reducing on-resistance and enhancing dv/dt capability, this device caters to the needs of cutting-edge applications where efficiency and reliability are crucial. The meticulous design and optimization of the PowerMESH™ layout ensure top-notch performance in even the most challenging scenarios

Key Features

Superior thermal performance
Fault-tolerant design realized
Enhanced noise immunity ensured
Rapid charging capability achieved

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	SuperMESH™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	905 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STB6NK60

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Ratings and Reviews

J**n 10/09/2023

Item in a bubble wrap envelope. Delivery time is early.

J**e 11/21/2022

The product does not meet the characteristics of the datasheet: the current transistor gain h21e 420 ... 800 should be. And in these purchased transistors h21e 340-390 ...

A**n 03/23/2022

Slow delivery, but au within the arrangement.