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STGW40H120F2 +BOM

IGBT Trench Field Stop 1200 V 80 A 468 W Through Hole TO-247-3

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STGW40H120F2
Datasheet:

STGW40H120F2 Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tube
Temperature (°C) min:

-55
EDA/CAD Models:

Request Free CAD Models for STGW40H120F2

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STGW40H120F2 General Description

The STGW40H120F2 boasts a state-of-the-art trench gate field-stop structure, setting it apart as a high-performance IGBT in the H series lineup. These devices are meticulously crafted to ensure maximum efficiency in high switching frequency converters, striking a fine balance between conduction and switching losses. Additionally, their favorable VCE(sat) temperature coefficient and precise parameter distribution make them ideal for parallel operation with enhanced safety

Key Features

Maximum junction temperature: T_J= 175 °C
High speed switching series
Minimized tail current
V_CE(sat)= 2.1 V (typ.) @ I_C= 40 A
5 μs minimum short circuit withstand time at T_J= 150 °C
Safe paralleling
Low thermal resistance

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tube
Temperature (°C) min	-55	Temperature (°C) max	175
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.1 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	468 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	STGW40H120F2
Continuous Collector Current Ic Max	80 A	Gate-Emitter Leakage Current	250 nA
Product Type	IGBT Transistors	Factory Pack Quantity	600
Subcategory	IGBTs	Unit Weight	1.340411 oz