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TGF3020-SM +BOM

GaN-based RF MOSFET Transistors designed for frequencies between 4 and 6 GHz

Key Features

  • Frequency: 4.0 to 6.0 GHz
  • Output Power (P3dB): 6.8 W at 5 GHz
  • Linear Gain: 12.7 dB at 5 GHz
  • Typical PAE3dB: 59.6% at 5 GHz
  • Operating Voltage: 32 V
  • Low thermal resistance package
  • CW and Pulse capable
  • 3 x 3 mm package

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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