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TGF2978-SM +BOM

High-power RF JFET Transistors capable of 20W output power with 50% efficiency

Manufacturer:

Qorvo
Mfr.Part #:

TGF2978-SM
Datasheet:

TGF2978-SM Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN-on-SiC
Operating Frequency:

DC to 12 GHz
EDA/CAD Models:

Request Free CAD Models for TGF2978-SM

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN-on-SiC
Operating Frequency	DC to 12 GHz	Gain	11 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	32 V
Vgs - Gate-Source Breakdown Voltage	- 2.7 V	Id - Continuous Drain Current	1.3 A
Output Power	19 W	Maximum Operating Temperature	+ 225 C
Pd - Power Dissipation	33 W	Mounting Style	SMD/SMT
Configuration	Single	Development Kit	TGF2978-SMEVB1
Height	0.203 mm	Length	4 mm
Moisture Sensitive	Yes	Number of Channels	1 Channel
Product Type	RF JFET Transistors	Series	TGF2978
Factory Pack Quantity	50	Subcategory	Transistors
Type	GaN SiC HEMT	Width	3 mm
Part # Aliases	TGF2978 1127373	Unit Weight	0.004339 oz