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TGF2929-FL +BOM

RF Power Field-Effect Transistor TGF2929-FL description in English

  • Manufacturer:

    Qorvo

  • Mfr.Part #:

    TGF2929-FL

  • Datasheet:

    TGF2929-FL Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    GaN-on-SiC

  • Id - Continuous Drain Current:

    12 A

  • Vds - Drain-Source Breakdown Voltage:

    28 V

TGF2929-FL General Description

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN

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Key Features

  • Frequency: DC to 3.5 GHz
  • Output Power (P3dB): 107 W at 3.5 GHz
  • Linear Gain:> 14 dB at 3.5 GHz
  • Typical PAE:> 50% at 3.5 GHz
  • Operating Voltage: 28 V
  • Low thermal resistance package
Qorvo Original Stock

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology GaN-on-SiC Id - Continuous Drain Current 12 A
Vds - Drain-Source Breakdown Voltage 28 V Rds On - Drain-Source Resistance -
Operating Frequency 3.5 GHz Gain 14 dB
Output Power 107 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style Flange Mount
Moisture Sensitive Yes Pd - Power Dissipation 144 W
Product Type RF MOSFET Transistors Series TGF2929
Factory Pack Quantity 25 Subcategory MOSFETs
Type RF Power MOSFET Vgs - Gate-Source Voltage 145 V
Vgs th - Gate-Source Threshold Voltage - 2.9 V Part # Aliases TGF2929 1123811
Unit Weight 2.264236 oz

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